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| SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE CONTROL APPLICATIONS. PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS. CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. K KTA1073T EPITAXIAL PLANAR PNP TRANSISTOR E B FEATURES High Voltage : VCBO=-300V, VCEO=-300V A D DIM A B G 2 3 C D E F G H I J K L H J I Low Saturation Voltage : VCE(sat)=-0.5V(Max.) Small Collector Output Capacitance : Cob=5.5pF(Typ.) Complementary to KTC3207T. F MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 1 C MAXIMUM RATINGS (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg 0.8 ) RATING -300 -300 -5 -100 -20 0.9 150 -55 150 UNIT V V V mA mA W L G J 1. EMITTER 2. BASE 3. COLLECTOR TSM * Package mounted on a ceramic board (600 Marking h FE Rank Type Name Lot No. SX ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO hFE(1) hFE(2) (Note) VCE(sat) VBE(sat) fT Cob O:50 150, Y:100~200 TEST CONDITION VCB=-300V, IE=0 VEB=-5V, IC=0 IC=-0.1mA, IE=0 IC=-1mA, IB=0 VCE=-10V, IC=-1mA VCE=-10V, IC=-20mA IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-10V, IC=-20mA VCB=-20V, IE=0, f=1MHz MIN. -300 -300 30 50 50 TYP. 55 5.5 MAX. -0.1 -0.1 200 -0.5 -1.2 6.0 V V MHz pF UNIT A A V V 2002. 11. 7 Revision No : 1 1/3 KTA1073T I C - VCE (LOW VOLTAGE REGION) -100 COLLECTOR CURRENT I C (mA) -1 I C - VCE (LOW CURRENT REGION) -10 COLLECTOR CURRENT I C (mA) -80A 0m A -5 mA -3 mA 2mA - -70A -60A -50A -40A -30A -80 -60 -40 -20 0 -1mA -0.8mA -0.6mA -0.4mA -0.3mA -0.2mA -0.1mA I B =0mA -8 -6 -4 -2 0 -20A -10A IB =0A 0 -2 -4 -6 -8 -10 0 -40 -80 -120 -160 -200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) hFE - I C 300 DC CURRENT GAIN h FE DC CURRENT GAIN h FE 500 300 COMMON EMITTER VCE =-10V h FE - I C 100 50 30 VCE =-10V -1V -5V 100 50 30 Ta=100 C Ta=25 C Ta=-55 C 10 5 3 COMMON EMITTER Ta=-25 C -0.1 -0.3 -1 -3 -10 -30 -100 10 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) -3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I B =10 VBE(sat) - I C -5 -3 COMMON EMITTER I C /I B =10 -1 -0.5 -0.3 Ta=100 C Ta=25 C -1 -0.5 -0.3 Ta=-55 C Ta=25 C Ta=100 C -0.1 -0.05 -0.03 -0.1 -0.3 -1 5C Ta=-5 -3 -10 -30 -100 -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 2002. 11. 7 Revision No : 1 2/3 KTA1073T Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) AMBIENT TEMPERATURE Ta ( C) 2002. 11. 7 Revision No : 1 3/3 |
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